In-Situ Infrared (IR) Detection of the High Pressure Phase Transformation of Silicon during Scratching Test
نویسندگان
چکیده
In this paper a new method of in-situ detection of the high pressure phase transformation of semiconductor materials during dead-load scratching is described. This method is based on the simple fact that single crystal silicon is transparent to IR light while metallic materials are not transparent to IR radiation. The sample material used here is silicon, but the same approach can be applied to germanium and other materials, such as ceramics (SiC), which have appropriate optical properties.
منابع مشابه
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